对自由落体的诺维科夫时间与牛顿绝对时间关系讨论

文章首先将史瓦西黑洞场中自由下落质点的固有时(诺维科夫坐标时)公式,由自然单位制化成了国际单位制中的形式.然后,根据牛顿第二定律和万有引力定律,推导出了自由下落质点经历的绝对时间公式,进而证明了广义相对论中自由落体经历的固有时,恰好等于牛顿力学给出的绝对时间.最后,对自由下落质点在黑洞内外经历的时间进行了特例计算.     

Initial boundary value problem for a class of strongly damped semilinear wave equations with logarithmic nonlinearity

This paper deals with the initial boundary value problem for strongly damped semilinear wave equations with logarithmic nonlinearity $u_{tt}-\Delta u-\Delta u_t={\phi }_p\left(u\right)log\left|u\right|$ in a bounded domain $\Omega \subset {\mathbb{R}}^n$. We discuss the existence, uniqueness and polynomial or exponential energy decay estimates of global weak solutions under some appropriate conditions. Moreover, we derive the finite time blow up results of weak solutions, and give the lower and upper bounds for blow-up time by the combination of the concavity method, perturbation energy method and differential–integral inequality technique.     

On-chip multiphoton Greenberger–Horne–Zeilinger state based on integrated frequency combs

One of the most important multipartite entangled states, Greenberger–Horne–Zeilinger state (GHZ), serves as a fundamental resource for quantum foundation test, quantum communication and quantum computation. To increase the number of entangled particles, significant experimental efforts should been invested due to the complexity of optical setup and the difficulty in maintaining the coherence condition for high-fidelity GHZ state. Here, we propose an ultra-integrated scalable on-chip GHZ state generation scheme based on frequency combs. By designing several microrings pumped by different lasers, multiple partially overlapped quantum frequency combs are generated to supply as the basis for on-chip polarization-encoded GHZ state with each qubit occupying a certain spectral mode. Both even and odd numbers of GHZ states can be engineered with constant small number of integrated components and easily scaled up on the same chip by only adjusting one of the pump wavelengths. In addition, we give the on-chip design of projection measurement for characterizing GHZ states and show the reconfigurability of the state. Our proposal is rather simple and feasible within the existing fabrication technologies and we believe it will boost the development of multiphoton technologies.     

基于平面度的燃料电池电化学性能模拟

 固体氧化物燃料电池的翘曲会影响电极-盖板界面的接触情况，从而影响电化学性能，对相关制造工艺提出了很大的挑战．为了分析燃料电池平面度对放电过程的影响，揭示其潜在的风险，我们建立了两个基于有限元法的仿真模型，对考虑平面度缺陷的燃料电池封装和放电进行分析．在对固体氧化物燃料电池进行平面度测量的基础上，首先建立了具有真实燃料电池翘曲特性的几何模型，分析封装过程中接触压力的分布情况．然后将接触电阻的仿真结果导入到三维多物理场耦合模型中，模拟具有平面度缺陷的燃料电池电化学性能．计算结果展示了燃料电池两侧封装过程中接触压力的分布情况．通过对比有接触电阻和无接触电阻的燃料电池电流密度，分析了电池与盖板的接触对放电过程的影响．结果表明，燃料电池的凹陷面较难达到满意的接触状态，需要比凸起面更大的封装压力．燃料电池表面接触电阻的变化将引起电流传导路径的变化，产生局部高电流或低电流．这项工作强调了在燃料电池中保持均匀分布的接触电阻的重要性，为今后的优化工作奠定了基础．     

Nowcasting Avalanches as Earthquakes and the Predictability of Strong Avalanches in the Olami-Feder-Christensen Model

Nowcasting earthquakes, suggested recently as a method to estimate the state of a fault and hence the seismic risk, is based on the concept of natural time. Here, we generalize nowcasting to a prediction method the merits of which are evaluated by means of the receiver operating characteristics. This new prediction method is applied to a simple (toy) model for the waiting (natural) time of the stronger earthquakes, real seismicity, and the Olami-Feder-Christensen earthquake model with interesting results revealing acceptable to excellent or even outstanding performance.     

小孔流速实验中的排水时间和流量系数的研究

本文以水作为理想流体,考虑到水头损失和孔口缩流效应,对小孔流速实验涉及的容器排水问题进行了系统的理论和实验研究.从理论上推导得出了圆柱形容器排水时间的解析解,分析了排水时间和自由液面速度、流量系数之间的规律,提出了排水时间的等效性.实验上,加工了底部开有不同小孔的大型圆柱形容器,测量了容器排水时间随液面高度的变化关系,借助实验结果计算了流量系数值,验证了容器排水时间的等效性关系,实验结果与理论计算符合较好.     

光栅衍射实验中测量光栅常数的两种辅助方法

衍射光栅可以将不同波长的光在空间上分离开,在光谱分析领域中有广泛应用.利用光栅的衍射来测量光栅常数是大学物理实验中的一个典型实验,而本文介绍的正是光栅衍射实验中的两个有趣现象:一是旋转光栅时,谱线的偏转角存在一个最小值;二是光栅旋转到一定角度时,衍射光斑会逐渐消失在视野中.论文从理论上分析解释这两种现象,并设计出两种测量光栅常数的方法,在实验上进行验证.与传统的用最小偏转角测光栅常数的方法相比,本文重点分析了由判定最小偏转角位置偏差所带来的影响,并提出了对称旋转测量的方法来进一步减小误差.     

HgCdTe薄膜的输运特性及其应力调控

窄禁带直接带隙半导体材料碲镉汞(Hg1–xCdxTe)是一种在红外探测与自旋轨道耦合效应基础研究方面都具有重要应用意义的材料.本文对单晶生长的体材料Hg0.851Cd0.149Te进行阳极氧化以形成表面反型层,将样品粘贴在压电陶瓷上减薄后进行磁输运测试,在压电陶瓷未加电压时观察到了明显的SdH振荡效应.对填充因子与磁场倒数进行线性拟合,获得样品反型层二维电子气的载流子浓度为ns=1.25×10^16m^-2.在不同磁场下,利用压电陶瓷对样品进行应力调控,观测到具有不同特征的现象,分析应是样品中存在二维电子气与体材料两个导电通道.零磁场下体材料主导的电阻的变化应来源于应力导致的带隙的改变;而高场下产生类振荡现象的原因应为应力导致的二维电子气能级的分裂.